The influence of lanthanum doping on the physical and electrical properties of BTV ferroelectric thin films

In this study, the ferroelectricity of as-deposited Bi_3.9La_0.1Ti_2.9V_0.1O₁₂ (BLTV), Bi_3.9Ti_2.9V_0.1O₁₂ (BTV), and Bi₄Ti₃O₁₂ (BIT) thin films was prepared and compared by rf magnetron sputtering technology. For the BLTV, BTV, and BIT thin films deposited on Pt/Ti/SiO₂/Si and SiO₂/Si substrate, the physical and electrical characteristics of lanthanum doped BTV (BLTV) were better than those of BIT and BTV thin films. Regarding the physical properties, the micro-structure of as-deposited BTV and BLTV thin films were obtained and compared by XRD patterns and SEM images. The BLTV and BTV thin films were also exhibited clear the ferroelectricity. The remanent polarization (P _r ) of as-deposited BLTV thin films was 11 μC/cm² as the measured frequency of 100 kHz. It was higher than those of BTV thin films. Finally, the polarization of BLTV thin film capacitor decreased by 9%, while that of the BTV decreased by 15% after the fatigue test with 10⁹ switching cycles.     

Voltage-controlled optical switch in planar nematic liquid crystal film

This study presents an integrated device that consists of a directional coupler and an electro-optic switch. The device is designed to include a nematic liquid crystal cell, comprising a grating-like electrode. Applying the appropriate voltage to the cell yields a periodically distributed refractive index. An incident polarized beam will couple to an adjacent channel if it is parallel to the channel. The coupling efficiency is controlled by applied voltage. An obliquely injected polarized beam will be reflected and refracted in the channel, and propagated along a curved path. The route of the beam can be controlled by applying the voltage. A multiport routing was achieved for voltage modulation. In addition, the distribution of refractive index is also investigated by employing conoscopic technique experimentally and numerically.     

Energy of grain boundaries between cusp misorientations

The disclination model of high angle grain boundaries proposed before is used to understand the energy-angle relations between cusp misorientations. It is found that the model predicts the correct relationship within experimental error with only one adjustable parameter which resembles the Burgers vector of dislocations at low angles. Experimental data for [100] symmetric tilt boundaries in Cu and Al and for [110] symmetric tilt boundaries in Al are used for illustration.     

Electron energy loss and secondary emission mechanisms in BaO

Electron Loss Spectroscopy (ELS), X-ray Photoemission (XPS), Secondary Emission Energy Distribution, and Secondary Electron yield data have been obtained on both evaporated films and sprayed-on coatings of BaO. Using the ELS correlated with the XPS data, bulk and surface plasmon losses as well as excitonic and interband transition electron loss mechanisms have been identified. It was found that at low primary beam energies (<100 eV), structure in the secondary emission energy distribution could be correlated with a conduction band energy structure. This structure was consistent with the model used to explain the loss transitions. The structure in the energy distribution curves shows little, if any, correlation with plasmon decay mechanisms and other two-step electron emission processes. On the contrary, for the case of BaO (at least at low primary energies), the energy distribution data and structure in the secondary yield vs. primary beam energy data indicate that most secondaries are produced by direct excitation of secondaries by the primary electrons.     

Coherent control of a V-type three-level system in a single quantum dot

In a semiconductor quantum dot, the IIx and IIy transitions to the polarization eigenstates, |x> and |y>, naturally form a three-level V-type system. Using low-temperature polarized photoluminescence spectroscopy, we have investigated the exciton dynamics arising under strong laser excitation. We also explicitly solved the density matrix equations for comparison with the experimental data. The polarization of the exciting field controls the coupling between the otherwise orthogonal states. In particular, when the system is initialized into \Y>, a polarization-tailored pulse can swap the population into |x>, and vice versa, effectively operating on the exciton spin.     

Enhancement of pairing correlation by t' in the two-dimensional extended t-J model

We investigate the effects of the next-nearest-neighbor (t') and the third-nearest-neighbor (t") hopping terms on superconductivity correlation in the 2D hole-doped extended t-J model based on the variational Monte Carlo, mean-field calculation and exact diagonalization method. Despite the diversity of the methods employed, the results all point to a consistent conclusion: While the d-wave superconductivity correlation is slightly suppressed by t' and t" in underdoped regions, it is greatly enhanced in the optimal and overdoped regions. The optimal Tc is a result of the balance of these two opposite trends.     

Building Pb nanomesas with atomic-layer precision

We demonstrate a novel scheme for manipulating metallic nanostructures involving a macroscopic number of atoms, yet with precise control in their local structures. The scheme entails a two-step process: (a) a triggering step using a scanning tunneling microscope, followed by (b) self-driven and self-limiting mass-transfer process. By using this scheme, we construct Pb nanomesas on Si(111) substrates whose thickness can be controlled with atomic-layer precision. The kinetic barrier for the mass transfer and the underlying mechanism behind this novel manipulation are determined.     

First principles determination of the bound levels of HeLi-

An analytical potential energy curve is developed from high quality ab initio calculations for the He+Li- interaction. The HeLi- electrostatic complex is found to have an Re of 18.5 bohrs and a De of 0.974 cm(-1). Numerical solution of the rovibrational Schr?dinger equation with this potential indicates two bound levels, (v,J)=(0,0) and (0,1), for all naturally occurring isotopologs (i.e., 4He7Li-, 4He6Li-, 3He7Li-, and 3He6Li-). For the common isotopolog, 4He7Li-, a D0 of 0.207 cm(-1) and an R0 of 26.5 bohrs is determined.     

Sequence influence of nonidentical InGaAsP quantum wells on broadband characteristics of semiconductor optical amplifiers--superluminescent diodes

Extremely broadband emission is obtained from semiconductor optical amplifiers-superluminescent diodes with nonidentical quantum wells made of InGaAsP/InP materials. The well sequence is experimentally shown to have a significant influence on the emission spectra. With the three In(0.67) Ga(0.33) As(0.72) P(0.28) quantum wells near the n -cladding layer and the two In(0.53) Ga(0.47) As quantum wells near the p -cladding layer, all bounded by In(0.86) Ga(0.14) As(0.3)P(0.7) barriers, the emission spectrum could cover from less than 1.3 to nearly 1.55 microm, and the FWHM could be near 300 nm.     

All-optical image processing by means of a photosensitive nonlinear liquid-crystal film: edge enhancement and image addition-subtraction

We demonstrate two simple yet efficient all-optical image-processing techniques that use nonlinear photosensitive dye-doped nematic liquid-crystal films, namely, edge enhancement and image addition-subtraction operations. These films require no external bias and function at much lower optical powers and shorter response times than other conventional methods.